TIP2955 Просмотр технического описания (PDF) - Comset Semiconductors
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TIP2955 Datasheet PDF : 3 Pages
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SEMICONDUCTORS
PNP TIP2955
NPN TIP3055
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO (*)
ICEO
ICER
ICEX
IEBO
VCE(SAT) (*)
Collector-Emitter Breakdown
Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter saturation
Voltage
IC= 30 mA, IB=0
IB =0, VCE = 30 V
VCE= 70 V, RBE= 100 Ω
VCE= 70 V, VBE= 1.5 V
VEB= 7 V, IC=0
IC= 4 A, IB= 400 mA
IC= 10 A, IB= 3.3 A
VBE (*) Base-Emitter On Voltage
IC= 4 A, VCE = 4 V
hFE (*)
Is/b
fT
DC Current Gain
Second Breackdown
collector Current.
With base Forward Biased
Transition Frequency
IC= 4 A, VCE = 4 V
IC= 10 A, VCE = 4 V
VCE= 30 V, t= 1.0 s
Non repetitive
VCE= 10 V, IC= 0.5 A
f= 1 kHz
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5%
Min Typ Max Unit
60 -
-
V
-
- 700 µA
-
-
1 mA
-
-
5 mA
-
-
5 mA
-
-
-
-
1.1
3
V
-
- 1.8 V
20
5
-
-
70
-
-
3
-
-
A
2.5 -
- MHz
15/10/2012
COMSET SEMICONDUCTORS
2|3
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