TIC216D Просмотр технического описания (PDF) - Comset Semiconductors
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TIC216D Datasheet PDF : 3 Pages
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SEMICONDUCTORS
TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
• 6 A RMS
• Glass Passivated Wafer
• 100 V to 800 V Off-State Voltage
• Max IGT of 5 mA (Quadrants 1-3)
• Sensitive gate triacs
• Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VDRM
IT(RMS)
ITSM
ITSM
IGM
PGM
PG(AV)
TC
Tstg
TL
A B DMS N
Repetitive peak off-state voltage
(see Note1)
100 200 400 600 700 800 V
Full-cycle RMS on-state current at (or
below) 70°C case temperature (see note2)
6
A
Peak on-state surge current full-sine-wave
(see Note3)
60
A
Peak on-state surge current half-sine-wave
(see Note4)
70
A
Peak gate current
±1
A
Peak gate power dissipation at (or below)
85°C case temperature (pulse width ≤200
2.2
W
µs)
Average gate power dissipation at (or
below) 85°C case (see Note5)
0.9
W
Operating case temperature range
-40 to +110
°C
Storage temperature range
-40 to +125
°C
Lead temperature 1.6 mm from case for 10
seconds
230
°C
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