TIC216D(2012) Просмотр технического описания (PDF) - Comset Semiconductors
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TIC216D Datasheet PDF : 3 Pages
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SEMICONDUCTORS
TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S
SILICON TRIACS
• 6 A RMS
• Glass Passivated Wafer
• 100 V to 800 V Off-State Voltage
• Max IGT of 5 mA (Quadrants 1-3)
• Sensitive gate triacs
• Compliance to ROH
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VDRM
IT(RMS)
ITSM
ITSM
IGM
PGM
PG(AV)
TC
Tstg
TL
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at (or below)
70°C case temperature (see note2)
Peak on-state surge current full-sine-wave
(see Note3)
Peak on-state surge current half-sine-wave
(see Note4)
Peak gate current
Peak gate power dissipation at (or below)
85°C case temperature (pulse width ≤200 µs)
Average gate power dissipation at (or below)
85°C case (see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for
10 seconds
Value
Unit
A B DMS N
100 200 400 600 700 800 V
6
A
60
A
70
A
±1
A
2.2
W
0.9
W
-40 to +110
°C
-40 to +125
°C
230
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R∂JC
Junction to case thermal resistance
R∂JA
Junction to free air thermal resistance
Value
≤ 2.5
≤ 62.5
Unit
°C/W
30/10/2012
COMSET SEMICONDUCTORS
1|3
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