TIC126E Просмотр технического описания (PDF) - Comset Semiconductors
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TIC126E Datasheet PDF : 4 Pages
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SEMICONDUCTORS
TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M,
TIC126N, TIC126S
THERMAL CHARACTERISTICS
Symbol
Ratings
tgt
Gate-controlled
Turn-on time
VAA = 30 V, RL = 6 Ω
RGK(eff) = 100 Ω, Vin = 20 V
tq
Circuit-communicated
Turn-off time
VAA = 30 V, RL = 6 Ω
IRM ≈ 10 A
R∂JC
Junction to case thermal resistance
R∂JA
Junction to free air thermal resistance
Value
0.8
11
≤ 2.4
≤ 62.5
Unit
µs
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IDRM
IRRM
IGT
VGT
IH
VTM
dv/dt
Repetitive peak off-state
current
Repetitive peak reverse
current
Gate trigger current
Gate trigger voltage
Holding current
Peak on-state voltage
Critical rate of rise of off-
state voltage
VD = Rated VDRM
RGK = 1 kΩ
TC = 110°C
VR = Rated VRRM, IG = 0
TC = 110°C
VAA = 6 V, RL = 100 Ω
tp(g) ≥ 20µs
VAA = 6 V, RL = 100 Ω
RGK = 1 kΩ, tp(g) ≥ 20µs
TC = -40°C
VAA = 6 V, RL = 100 Ω
RGK = 1 kΩ, tp(g) ≥ 20µs
VAA = 6 V, RL = 100 Ω
RGK = 1 kΩ, tp(g) ≥ 20µs
TC = 110°C
VAA = 6 V, RGK = 1 kΩ
initiating IT = 100 mA
VAA = 6 V, RGK = 1 kΩ
initiating IT = 100 mA
TC = -40°C
ITM = 8A (see Note6)
VD = Rated VD
TC = 110°C
Min Typ Max Unit
-
-
2 mA
-
-
2 mA
-
5 20 mA
-
- 2.5
- 0.8 1.5 V
0.2 -
-
-
- 40
mA
-
- 70
-
- 1.4 V
- 100 - V/µs
30/10/2012
COMSET SEMICONDUCTORS
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