TIC116C Просмотр технического описания (PDF) - Comset Semiconductors
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TIC116C Datasheet PDF : 3 Pages
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SEMICONDUCTORS
TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,
TIC116N, TIC116S
THERMAL CHARACTERISTICS
Symbol
tgt
tq
R∂JC
R∂JA
Gate-controlled
Turn-on time
Circuit-communicated
Turn-off time
Ratings
VAA = 30 V, RL = 6 Ω,
RGK(eff) = 100 Ω, Vin = 20 V
VAA = 30 V, RL = 6 Ω, IRM ≈ 10 A
Value
0.8
11
≤3
≤ 62.5
Unit
µs
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
IDRM
IRRM
IGT
VGT
IH
VTM
dv/dt
Repetitive peak off-state current
Repetitive peak reverse current
Gate trigger current
Gate trigger voltage
VD = Rated VDRM, RGK = 1 kΩ,
TC = 110°C
VR = Rated VRRM, IG = 0,
TC = 110°C
VAA = 6 V, RL = 100 Ω,
tp(g) ≥ 20µs
VAA = 6 V, RL = 100 Ω,
RGK = 1 kΩ, tp(g) ≥ 20µs,
TC = -40°C
VAA = 6 V, RL = 100 Ω,
RGK = 1 kΩ, tp(g) ≥ 20µs,
VAA = 6 V, RL = 100 Ω,
RGK = 1 kΩ, tp(g) ≥ 20µs,
TC = 110°C
- - 2 mA
- - 2 mA
- 5 20 mA
- - 2.5
- 0.8 1.5 V
0.2 - -
Holding current
Peak on-state voltage
VAA = 6 V, RGK = 1 kΩ, initiating
IT = 100 mA
-
VAA = 6 V, RGK = 1 kΩ, initiating
IT = 100 mA,
-
TC = -40°C
ITM = 8A (see Note6)
-
- 40
mA
- 70
- 1.7 V
Critical rate of rise of off-state
voltage
VD = Rated VD,
TC = 110°C
- 100 - V/µs
Note 6:
This parameters must be measured using pulse techniques, tW = 300µs, duty cycle ≤ 2 %, voltage-sensing
contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch) from de device body.
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