HAL621SF-A Просмотр технического описания (PDF) - Micronas
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HAL621SF-A Datasheet PDF : 16 Pages
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HAL62x
3.6. Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4.2 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol
IDD
IDD
VDDZ
VOZ
VOL
VOL
IOH
IOH
fosc
td
ten(O)
tr
tf
RthJSB
case
SOT-89B
RthJA
case
TO-92UA
Parameter
Pin No. Min.
Supply Current
1
3.6
Supply Current over
Temperature Range
1
2.2
Overvoltage Protection
at Supply
1
–
Overvoltage Protection at Output 3
–
Output Voltage
Output Voltage over
Temperature Range
Output Leakage Current
3
–
3
–
3
–
Output Leakage Current over 3
–
Temperature Range
Internal Oscillator
Chopper Frequency
–
–
Delay Time between Switching –
–
Threshold DB and Edge of Out-
put over Temperature Range
Enable Time of Output after
3
–
Setting of VDD
Output Rise Time
3
–
Output Fall Time
3
–
Thermal Resistance Junction
–
–
to Substrate Backside
Thermal Resistance Junction
–
–
to Soldering Point
Typ.
4.5
4.5
28.5
28
160
160
0.01
–
360
25
30
0.07
0.05
150
150
Max.
Unit
5.4
mA
7.2
mA
32.5
V
32.5
V
280
mV
400
mV
0.1
µA
10
µA
–
kHz
–
µs
70
µs
0.4
µs
0.4
µs
200
K/W
200
K/W
Conditions
TJ = 25 °C
IDD = 25 mA , TJ = 25 °C,
t = 20 ms
IOH = 25 mA , TJ = 25 °C,
t = 20 ms
IOL = 20 mA, TJ = 25 °C
IOL = 20 mA
Output switched off,
TJ = 25 °C, VOH ≤ 24 V
Output switched off,
TJ ≤150 °C, VOH ≤ 24 V
TJ = 25 °C
B > BON + 4 mT or
B < BOFF – 4 mT
VDD = 12 V
B > BON + 2 mT or
B < BOFF – 2 mT
VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–3
8
Micronas
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