GP250MHB06S Просмотр технического описания (PDF) - Dynex Semiconductor
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GP250MHB06S Datasheet PDF : 10 Pages
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GP250MHB06S
1400
td(off)
1200
1000
Tj = 125˚C
VGE = ±15V
VCE = 300V
Rg = 5Ω
800
tf
600
td(on)
400
200
tr
0
0
50 100 150 200 250 300
Collector current, IC - (A)
Fig.11 Typical switching characteristics
250
225
200
175
150
125
100
75
50
25
0
0
Tj = 125˚C
Tj = 25˚C
0.25
0.50
0.75
1.00
1.25
Foward voltage, VF - (V)
Fig.12 Diode typical forward characteristics
10000
600
500
400
300
200
100 Tj = 125˚C
Vge = ±15V
Rg = 5Ω
0
0
200
400
600
Collector-emitter voltage, Vce - (V)
Fig.13 Reverse bias safe operating area
IC max. (single pulse)
1000
50µs
100µs
100
IC
max.
DC
tp = 1ms
(continuous)
10
1
800
1
10
100
1000
Collector-emitter voltage, Vce - (V)
Fig.14 Forward bias safe operating area (DC and single pulse)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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