SI9410BDY(2003) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI9410BDY Datasheet PDF : 5 Pages
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Si9410BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
0.2
40
ID = 250 mA
- 0.0
30
- 0.2
20
- 0.4
10
- 0.6
Single Pulse Power
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0
10 - 3
10 - 2
10 - 1
1
10
Time (sec)
Safe Operating Area
100
rDS(on) Limited
IDM Limited
P(t) = 0.0001
10
P(t) = 0.001
1
ID(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
0.01
0.1
TA = 25_C
Single Pulse
BVDSS Limited
P(t) = 1
P(t) = 10
dc
1
10
100
VDS - Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
100 600
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72269
S-31409—Rev. A, 07-Jul-03
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