SH8G41 Просмотр технического описания (PDF) - Toshiba

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SH8G41

TOSHIBA HIGH−SPEED THYRISTOR SILICON PLANAR TYPE

Toshiba 

TOSHIBA HIGH−SPEED THYRISTOR SILICON PLANAR TYPE

SH8G41

FOR AUTOMATIC−STROBE FLASHER APPLICATIONS

−−− DISCHARGER (Chopper)

SH8G41

Unit: mm

l Type No. SH8G41 is Designed for a Small Package Device Having

ShortedTurn−Off Time and Low Turn−On Loss at High Current.

l Repetitive Peak Off−State Voltage and Peak Reverse Voltage

: VDRM = VRRM = 400V

l Repetitive Peak Surge On−State Current : ITRM = 350A

l Critical Rate of Rise of On−State Current : di/dt = 100A/µs

l Plastic Mold Package

MAXIMUM RATINGS

CHARACTERISTIC

SYMBOL

Repetitive Peak Off−State and

Reverse Voltage

Non−Repetitive Peak Reverse

Voltage

(Note 1)

Repetitive Peak Surge On−State

Current

(Note 2)

Critical Rate of Rise of On−State

Current

(Note 3)

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Forward Gate Current

Junction Temperature

Storage Temperature Range

VDRM

VRRM

VRSM

ITRM

di /dt

PGM

PG (AV)

IGM

Tj

Tstg

Note 1: Non − Rep. < 5ms, Tj = 0~125°C

Note 2: CM = 1000µF

Note 3: iG = 100mA

tgw = 10µs

tgr ≤ 250ns

RATING

400

450

350

100

5

0.5

2

−40~125

−40~125

UNIT

V

V

A

A / µs

W

W

A

°C

°C

JEDEC

JEITA

TOSHIBA

Weight: 2.0g

TO−220AB

―

13−10G1B

1

2001-07-10

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