RMWP23001 Просмотр технического описания (PDF) - Fairchild Semiconductor

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RMWP23001

21–24 GHz Power Amplifier MMIC

Fairchild Semiconductor 

Typical Characteristics (Continued)

RMWP23001, 23 GHz Power Amplifier, Typical Performance,

On-Wafer Measurements, Vd = 4V, Idq = 400mA and 435mA

26

26

P1dB (mA)

25

-400

25

-435

24

24

23

23

22

22

21

21

-435

20

20

19

19

-400

Gain (mA)

18

18

18

19

20

21

22

23

24

25

FREQUENCY (GHz)

RMWP23001, Typical Performance Variation with Temperature

Vd = 4V, Idq = 400mA, Chip Bonded into 50Ω Test Fixture

26

25

-25°C

24

+30°C (room)

23

+80°C

22

21

20

20

21

22

23

24

FREQUENCY (GHz)

©2004 Fairchild Semiconductor Corporation

RMWP23001 Rev. C

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