RMWB04001 Просмотр технического описания (PDF) - Fairchild Semiconductor
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RMWB04001 Datasheet PDF : 7 Pages
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Electrical Characteristics (At 25°C), 50Ω system, Vd = +4V, Quiescent Current (Idq) = 36mA
Parameter
Frequency Range
Gate Supply Voltage1 (Vg)
Gain (Small Signal at Pin = -12dBm)
Gain Variation vs. Frequency
Power Output Saturated: (Pin = -2dBm)
Input Return Loss (Pin = -12dBm)
Output Return Loss (Pin = -12dBm)
DC Detector Voltage at Pout = 20dBm
Min
Typ
Max
3.5
4.0
-0.7
24
27
0.5
18
20
14
12
0.5
Note:
1: Typical range of gate voltage is -1 to -0.4V to set typical Idq of 36mA.
Units
GHz
V
dB
dB
dBm
dB
dB
V
Functional Block Diagram1
DRAIN
SUPPLY
Vd1
DRAIN
OUTPUT POWER
SUPPLY DETECTOR VOLTAGE
Vd2
Vdet
RF IN
MMIC CHIP
RF OUT
GROUND
(Back of Chip)
GATE SUPPLY
Vg
Note:
1: Detector delivers > 0.1V DC into 3kΩ load resistor for > 20dBm output power. If output power level detection is not desired, do not make connection to detector
bond pad.
©2004 Fairchild Semiconductor Corporation
RMWB04001 Rev. C
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