RF305B6S Просмотр технического описания (PDF) - ROHM Semiconductor
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RF305B6S Datasheet PDF : 5 Pages
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Super Fast Recovery Diode
RF305B6S
Series
Standard Fast Recovery
Applications
General rectification
Dimensions (Unit : mm)
C0.5
6.5±0.2
5.1±0.2
0.1
2.3±0.2
0.1
0.5±0.1
Features
1)Low forward voltage
2)Low switching loss
Construction
Silicon epitaxial planer
0.9
（1） （2）
①
（3）
0.75
0.65±0.1
2.3±0.2 2.3±0.2
ROHM : CPD
JEITA : SC-63
① Manufacture Date
0.5±0.1
1.0±0.2
Taping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
Data Sheet
Land size figure (Unit : mm)
6.0
1.6
1.6
CPD 2.3 2.3
Structure
φ1.55±0.1
0
0.4±0.1
TL
6.8±0.1
8.0±0.1
φ3.0±0.1
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Average rectified forward current
Io
Forward current surge peak
Junction temperature
Storage temperature
IFSM
Tj
Tstg
Conditions
Limits
Unit
Duty≤0.5
600
V
Direct voltage
600
V
60Hz half sin wave,
resistive load
Tc=83°C
3.0
A
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
50
A
150
C
55 to 150 C
Electrical characteristics (Tj=25C)
Parameter
Symbol
Conditions
Min.
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
VF
IF=3.0A
－
IR
VR=600V
－
trr
IF=0.5A,IR=1A,Irr=0.25×IR
－
Rth(j-l)
junction to lead
－
Typ.
Max.
1.3
1.7
0.04
10
22
30
－
12
2.7±0.2
Unit
V
μA
ns
°C/W
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1/4
2011.10 - Rev.A
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