NUP2105LT1 Просмотр технического описания (PDF) - ON Semiconductor
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NUP2105LT1 Datasheet PDF : 8 Pages
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NUP2105L
110
100
90
80
70
60
50
40
30
20
10
0
0
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
12.0
WAVEFORM
PULSE WAVEFORM
PARAMETERS
tr = 8 ms
10.0 8 x 20 ms per Figure 1
td = 20 ms
c−t
8.0
td = IPP/2
6.0
4.0
2.0
0.0
5
10
15
20
25
30
25
30
35
40
45
50
t, TIME (ms)
VC, CLAMPING VOLTAGE (V)
Figure 1. Pulse Waveform, 8 × 20 ms
Figure 2. Clamping Voltage vs Peak Pulse Current
35
30
125°C
25
25°C
f = 1.0 MHz, Line to Ground
20 −40°C
15
10
0
2
4
6
8
10
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Junction Capacitance vs
Reverse Voltage
25
−55°C
20
+25°C
TA = +150°C
15
+65°C
10
5
50
45
40
35
30
25
25°C
20
65°C
15
10
−55°C
5
TA = +150°C
0
20 22 24 26 28 30 32 34
VBR, VOLTAGE (V)
Figure 4. VBR versus IT Characteristics of the
NUP2105L
120
100
80
60
40
20
0
0
2
4
6
8
10
12
IL, LEAKAGE CURRENT (nA)
Figure 5. IR versus Temperature Characteristics of
the NUP2105L
0
−60 −30
0 30 60 90
TEMPERATURE (°C)
120 150 180
Figure 6. Temperature Power Dissipation Derating of
the NUP2501L
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