MS1505 Просмотр технического описания (PDF) - Advanced Power Technology

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MS1505

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

Advanced Power Technology  

RF & MICROWAVE TRANSISTORS

VHF MOBILE APPLICATIONS

Features

• 160 MHz

• 13.6 VOLTS

• POUT = 30 WATTS

• GP = 10 dB MINIMUM

• COMMON EMITTER CONFIGURATION

DESCRIPTION:

The MS1505 is a 13.6 volt Class C epitaxial silicon NPN planar

transistor designed primarily for VHF communications. The MS1505

utilizes an emitter ballasted die geometry to withstand severe load

VSWR conditions.

MS1505

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

VCBO

VCEO

VCES

VEBO

IC

PDISS

TJ

Collector-Base Voltage

Collector-Emitter Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

Power Dissipation

Junction Temperature

TSTG

Storage Temperature

Thermal Data

RTH(J-C)

Junction-case Thermal Resistance

053-7086 Rev - 10-2002

Value

36

18

36

4.0

8.0

70

+200

-65 to +150

1.2

Unit

V

V

V

V

A

W

°C

°C

°C/W

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