MPSH10 Просмотр технического описания (PDF) - Motorola => Freescale
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MPSH10 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSH10/D
VHF/UHF Transistors
NPN Silicon
COLLECTOR
3
1
BASE
2
EMITTER
MPSH10
MPSH11
Motorola Preferred Devices
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
PD
25
Vdc
30
Vdc
3.0
Vdc
350
mW
2.8
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.0
Watts
8.0
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
357
Thermal Resistance, Junction to Case
RqJC
125
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
1
2
3
CASE 29–04, STYLE 2
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
25
V(BR)CBO
30
V(BR)EBO
3.0
ICBO
—
IEBO
—
Max
Unit
—
Vdc
—
Vdc
—
Vdc
100
nAdc
100
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
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