MMST2907A Просмотр технического описания (PDF) - Galaxy Semi-Conductor
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MMST2907A Datasheet PDF : 3 Pages
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BL Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
z Power dissipation.(PC=200mW)
z Epitaxial planar die construction.
z Complements the MMST2222A.
Pb
Lead-free
APPLICATIONS
z General purpose application.
Production specification
MMST2907A
ORDERING INFORMATION
Type No.
Marking
MMST2907A
K3F
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
IC
Collector Current -Continuous
-600
PC
Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
℃
Document number: BL/SSSTF050
Rev.A
www.galaxycn.com
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