MMDF2N02E Просмотр технического описания (PDF) - ON Semiconductor
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MMDF2N02E Datasheet PDF : 7 Pages
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MMDF2N02E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 2.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 6.0 W)
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc, RG = 9.1 W)
Fall Time
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 2)
(IS = 2.0 Adc, VGS = 0 Vdc)
Reverse Recovery Time
See Figure 11
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Storage Charge
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min
Typ
Max
Unit
Vdc
25
−
−
mAdc
−
−
1.0
−
−
10
−
−
100
nAdc
Vdc
1.0
2.0
3.0
W
−
0.083 0.100
−
0.110 0.200
1.0
2.6
−
Mhos
−
380
532
pF
−
235
329
−
55
110
−
7.0
21
ns
−
17
30
−
27
48
−
18
30
−
10
30
−
35
70
−
19
38
−
25
50
−
10.6
30
nC
−
1.3
−
−
2.9
−
−
2.7
−
−
1.0
1.4
Vdc
−
34
66
ns
−
17
−
−
17
−
−
0.03
−
mC
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