MMDF2C03HD(2006) Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
Список матч
MMDF2C03HD Datasheet PDF : 10 Pages
| |||
MMDF2C03HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3)
Characteristic
Symbol Polarity Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
V(BR)DSS
−
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
IDSS
(N)
(P)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
−
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th)
(N)
(P)
Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
RDS(on)
(N)
(P)
Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
(N)
(P)
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
(N)
(P)
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
(N)
(P)
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
Coss
(N)
f = 1.0 MHz)
(P)
Transfer Capacitance
Crss
(N)
(P)
Vdc
30
−
−
−
−
1.0
mAdc
−
−
1.0
−
−
100
nAdc
1.0
1.7
3.0
Vdc
1.0
1.5
2.0
W
−
0.06 0.070
−
0.17 0.200
W
−
0.065 0.075
−
0.225 0.300
2.0
3.6
2.0
3.4
mhos
−
−
−
450
630
pF
−
397
550
−
160
225
−
189
250
−
35
70
−
64
126
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc, RG = 9.1 W)
(VDD = 15 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc, RG = 6.0 W)
td(on)
tr
td(off)
tf
(N)
−
12
24
ns
(P)
−
16
32
(N)
−
65
130
(P)
−
18
36
(N)
−
16
32
(P)
−
63
126
(N)
−
19
38
(P)
−
194
390
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc, RG = 9.1 W)
(VDD = 15 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 6.0 W)
td(on)
tr
td(off)
tf
(N)
−
8.0
16
(P)
−
9.0
18
(N)
−
15
30
(P)
−
10
20
(N)
−
30
60
(P)
−
81
162
(N)
−
23
46
(P)
−
192
384
Total Gate Charge
QT
(N)
−
11.5
16
nC
(P)
−
14.2
19
Gate−Source Charge
Gate−Drain Charge
(VDS = 10 Vdc, ID = 3.0 Adc,
Q1
VGS = 10 Vdc)
(VDS = 24 Vdc, ID = 2.0 Adc,
Q2
VGS = 10 Vdc)
Q3
3. Negative signs for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
(N)
−
1.5
−
(P)
−
1.1
−
(N)
−
3.5
−
(P)
−
4.5
−
(N)
−
2.8
−
(P)
−
3.5
−
http://onsemi.com
2
Share Link: 