SMBTA06(2002) Просмотр технического описания (PDF) - Infineon Technologies
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SMBTA06 Datasheet PDF : 4 Pages
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NPN Silicon AF Transistor
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA56 (PNP)
MMBTA56 (PNP)
SMBTA06/ MMBTA06
3
2
1 VPS05161
Type
Marking
SMBTA06/ MMBTA06 s1G
1=B
Pin Configuration
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
80
80
4
500
1
100
200
330
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
215
Unit
V
mA
A
mA
mW
°C
K/W
1
Feb-20-2002
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