MMBT5550 Просмотр технического описания (PDF) - Weitron Technology
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MMBT5550 Datasheet PDF : 5 Pages
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MMBT5550
MMBT5551
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol Min
OFF CHARACTERISTICS
Collector Cutoff Current
( VCB 100 Vdc,IE= 0 )
( VCB 120 Vdc, IE= 0 )
( VCB 100 Vdc,IE= 0 ,TA= 100 C )
( VCB 100 Vdc,IE= 0,TA= 100 C )
Emitter Cutoff Current
( VEB 4.0Vdc, IC=0 )
MMBT5550
MMBT5551
MMBT5550
MMBT5551
I CBO
I EBO
Max
100
50
100
50
50
Unit
nAdc
uAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC=1.0 mAdc, VCE=5.0 Vdc)
(IC=10 mAdc, VCE=5.0 Vdc)
(IC=50 mAdc, VCE=5.0 Vdc)
Collector-Emitter Saturation Voltage
(IC=10 mAdc, IB=1.0mAdc)
(IC=50 mAdc, IB=5.0mAdc)
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
Both Types
MMBT5550
MMBT5551
Base-Emitter Saturation Voltage
(IC=10 mAdc, IB=1.0mAdc)
(IC=50 mAdc, IB=5.0mAdc)
Both Types
MMBT5550
MMBT5551
1. FR-5=1.0 x 0.75 x 0.062 in
2. Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%
hFE
60
80
60
80
20
30
VCE(sat)
-
-
-
VBE(sat)
-
-
-
-
-
-
250
250
-
-
Vdc
0.15
0.25
0.20
Vdc
1.0
1.2
1.0
WEITRON
http://www.weitron.com.tw
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