MMBT5550 Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

MMBT5550

NPN General Purpose Amplifier

Galaxy Semi-Conductor 

Production specification

NPN General Purpose Amplifier

MMBT5550

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX UNIT

Collector-base breakdown voltage

V(BR)CBO IC=100μA IE=0

160

V

Collector-emitter breakdown voltage V(BR)CEO IC=1.0mA IB=0

140

V

Emitter-base breakdown voltage

V(BR)EBO IE=10μA IC=0

6

V

Collector cut-off current

ICBO

VCB=100V IE=0

100 nA

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

IEBO

hFE

VCE(sat)

VBE(sat)

VEB=4V IC=0

VCE=5.0V IC=1.0mA

VCE=5.0V IC=10mA

VCE=5.0V IC=50mA

IC=10mA IB=1.0mA

IC=50mA IB=5.0mA

IC=10mA IB=1.0mA

IC=50mA IB=5.0mA

50 nA

60

60

250

20

0.15

V

0.25

1.0

V

1.2

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

C117

Rev.A

www.gmicroelec.com

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