MMBT5550 Просмотр технического описания (PDF) - Galaxy Semi-Conductor
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MMBT5550 Datasheet PDF : 4 Pages
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NPN General Purpose Amplifier
FEATURES
z Epitaxial planar die construction.
z Ultra-small surface mount package.
Pb
Lead-free
Production specification
MMBT5550
APPLICATIONS
z High voltage transistors.
z General purpose application.
ORDERING INFORMATION
Type No.
Marking
MMBT5550
M1F
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj,Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal resistance,Junction to ambient
Junction and Storage Temperature
160
140
6
600
300
417
-55 to+150
Unit
V
V
V
mA
mW
℃/W
℃
C117
Rev.A
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