MJW16206 Просмотр технического описания (PDF) - Inchange Semiconductor

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MJW16206

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

MJW16206

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=10mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1.0mA; IC=0

VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=0.4A

VCEsat-2 Collector-emitter saturation voltage IC=6.5A ;IB=1.5A

VBEsat Base-emitter saturation voltage

ICES

Collector cut-off current

IEBO

Emitter cut-off current

IC=6.5A ;IB=1.5A

VCE=1200V,VBE=0

VCE=850V,VBE=0

VEB=8V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=10A ; VCE=5V

hFE-3

fT

COB

DC current gain

Transition frequency

Collector outoput capacitance

IC=12A ; VCE=5V

IC=0.5A ; VCE=10V;f=1.0MHz

IE=0; f=100kHz ; VCB=10V

MIN TYP. MAX UNIT

500

V

8

V

1.0

V

1.0

V

1.5

V

250

25

μA

25

μA

24

5

13

3

3.0

MHz

350

pF

2

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