MJ11029 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
Список матч
MJ11029 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
MJ11029
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -60V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= -25A
: hFE= 400(Min.)@IC= -50A
·Complement to Type MJ11028
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continunous
-50
A
ICM
Collector Current-Peak
-100
A
IB
Base Current-Continunous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
-2
A
300
W
200
℃
-55~+200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.584 ℃/W
isc Website：www.iscsemi.cn
Share Link: 