MGFC42V3436 Просмотр технического описания (PDF) - Mitsumi
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MGFC42V3436 Datasheet PDF : 2 Pages
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TYPICAL CHARACTERISTICS (Ta=25deg.C)
P1dB,GLP vs. f
45
VDS=10(V)
IDS=4.5(A)
44
P1dB
43
42
GLP
41
40
39
3.3
3.4
3.5
3.6
FREQUENCY f(GHz)
45
VDS=10(V)
IDS=4.5(A)
f=3.5(GHz)
40
Po,PAE vs. Pin
Po
35
30
PAE
25
20
10
15
20
25
30
INPUT POWER Pin (dBm)
19
18
17
16
15
14
13
3.7
100
90
80
70
60
50
40
30
20
10
0
35
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC42V3436
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
45
VDS=10(V)
IDS=4.5(A)
f=3.5(GHz)
40
Po,PAE vs. Pin
Po
35
30
PAE
25
20
10
15
20
25
30
INPUT POWER Pin (dBm)
100
90
80
70
60
50
40
30
20
10
0
35
S parameters ( Ta=25deg.C , VDS=10(V),IDS=4.5(A) )
S-Parameters (TYP.)
f
S11
S21
(GHz)
3.30
3.35
3.40
3.45
3.50
3.55
3.60
3.65
3.70
Magn.
0.43
0.30
0.25
0.23
0.30
0.36
0.39
0.42
0.43
Angle(deg)
-19
-56
-80
-138
-179
154
143
126
118
Magn.
4.592
5.044
5.124
5.188
5.114
4.895
4.758
4.546
4.433
Angle(deg)
133
112
103
82
63
45
37
21
14
Magn.
0.04
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
S12
Angle(deg)
74
55
42
21
4
-20
-29
-43
-52
MITSUBISHI
ELECTRIC
Magn.
0.40
0.31
0.26
0.20
0.18
0.19
0.20
0.24
0.25
S22
Angle(deg)
10
-14
-26
-59
-96
-129
-139
-157
-163
Sep. 1998
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