MCR100-6 Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd

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MCR100-6

Sensitive Gate Silicon Controlled Rectifiers

Shenzhen Winsemi Microelectronics Co., Ltd 

MCR100-6

Electrical Characteristics (TJ = 25°C, RGK = 1 kΩ unless otherwise specified)

Symbol

Characteristics

IDRM/IRRM

off-state leakage current

(V AK= V DRM/V RRM)

VTM

Forward “On” voltage (ITM = 1A tp = 380μs)

Gate trigger current (continuous dc)

IGT

(VAK = 7 Vdc, RL = 100 Ω)

Gate Trigger Voltage (Continuous dc)

VGT

(VAK = 7 Vdc, RL = 100 Ω)

Min Typ. Max Unit

Tc=25℃

Tc=125℃

-

-

1

μA

100

(Note2.1) -

(Note2.2)

15

1.2 1.7

V

-

200 μA

(Note2.2)

-

-

0.8

V

VGD

dv/dt

IH

Gate threshold Voltage

Voltage Rate of Rise Off-State Voltage

(VD=0.67VDRM ;exponential waveform)

Holding Current (VD = 12 V; IGT = 0.5 mA)

(Note2.1) 0.2

-

TJ=125℃

500 800

Gate open circuit

25

-

2

-

V

-

V/μs

5

mA

IL

latching current (VD = 12 V; IGT = 0.5 mA)

Rd

Dynamic resistance

TJ=125℃

-

2

6

mA

-

-

245 mΩ

Note 2.1 Pulse width≤1.0ms,duty cycle≤1%

2.2 RGK current is not included in measurement.

2/5

Steady, keep you advance

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