MCR100-6 Просмотр технического описания (PDF) - SemiWell Semiconductor

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MCR100-6

Sensitive Gate Silicon Controlled Rectifiers

SemiWell Semiconductor 

MCR100-8

Electrical Characteristics ( TC = 25 °C unless otherwise noted )

Symbol

Items

Conditions

Ratings

Unit

Min. Typ. Max.

IDRM

Repetitive Peak Off-State

Current

VAK = VDRM or VRRM ; RGK = 1000 Ω

TC = 25 °C

─

TC = 125 °C

─

─

10

㎂

─

200

VTM

Peak On-State Voltage (1)

( ITM = 1 A, Peak )

─

1.2

1.7

V

IGT

Gate Trigger Current (2)

VAK = 6 V, RL=100 Ω

TC = 25 °C

─

TC = - 40 °C

─

─

200

㎂

─

500

VGT

Gate Trigger Voltage (2)

VD = 7 V, RL=100 Ω

TC = 25 °C

─

TC = - 40 °C

─

─

0.8

V

─

1.2

VGD

Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω

TC = 125 °C

0.2

─

─

V

dv/dt

Critical Rate of Rise Off-State

Voltage

VD = 0.67 VDRM ,

Exponential waveform,

TJ = 125 °C

RGK = 1000 Ω

500

800

─ V/㎲

Critical Rate of Rise On-State

di/dt

Current

ITM = 2A ; Ig = 10mA

─

─

50 A/㎲

IH

Holding Current

Rth(j-c)

Rth(j-a)

Thermal Impedance

Thermal Impedance

VAK = 12 V, Gate Open

Initiating Curent = 50mA

TC = 25 °C

─

─

TC = - 40 °C

Junction to case

─

Junction to Ambient

─

※ Notes :

1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%

2. Does not include RGK in measurement.

2

5.0

mA

─

10

─

60 °C/W

─

150 °C/W

2/5

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