LS4148-GS08(2007) Просмотр технического описания (PDF) - Vishay Semiconductors

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LS4148-GS08
(Rev.:2007)

Small Signal Fast Switching Diodes

Vishay Semiconductors 

LS4148/LS4448

Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Part

Symbol

Min

Forward voltage

IF = 5 mA

LS4448

VF

620

IF = 50 mA

LS4148

VF

IF = 100 mA

LS4448

VF

Reverse current

VR = 20 V

IR

VR = 20 V, Tj = 150 °C

IR

VR = 75 V

IR

Breakdown voltage

IR = 100 µA, tp/T = 0.01,

tp = 0.3 ms

V(BR)

100

Diode capacitance

VR = 0, f = 1 MHz, VHF = 50 mV

CD

Rectification efficiency

VHF = 2 V, f = 100 MHz

ηr

45

Reverse recovery time

IF = IR = 10 mA, iR = 1 mA

trr

IF = 10 mA, VR = 6 V,

trr

iR = 0.1 x IR, RL = 100 Ω

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Typ.

Max

Unit

720

mV

860

1000

mV

930

1000

mV

25

nA

50

µA

5

µA

V

4

pF

%

8

ns

4

ns

1000

100

LS4148

10

Scattering Limit

1

0.1

0

Tj = 25 °C

0.4 0.8 1.2 1.6 2.0

16640

VF - Forward Voltage (V)

Figure 1. Forward Current vs. Forward Voltage

1000

Tj = 25 °C

100

Scattering Limit

10

1

1

94 9098

10

100

VR- Reverse Voltage (V)

Figure 3. Reverse Current vs. Reverse Voltage

1000

100

LS4448

10

Scattering Limit

1

0.1

0

Tj = 25 °C

0.4 0.8 1.2 1.6 2.0

16642

VF - Forward Voltage (V)

Figure 2. Forward Current vs. Forward Voltage

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2

3.0

2.5

f = 1 MHz

Tj = 25 °C

2.0

1.5

1.0

0.5

0

0.1

1

10

100

94 9099

VR - Reverse Voltage (V)

Figure 4. Diode Capacitance vs. Reverse Voltage

Document Number 85561

Rev. 1.8, 04-May-07

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