BAP51-03 Просмотр технического описания (PDF) - Philips Electronics
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BAP51-03 Datasheet PDF : 8 Pages
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Philips Semiconductors
General purpose PIN diode
Preliminary specification
BAP51-03
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
VR
reverse voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
CONDITIONS
IF = 50 mA
IR = 10 µA
VR = 50 V
VR = 0; f = 1 MHz
VR = 1 V; f = 1 MHz
VR = 5 V; f = 1 MHz
IF = 0.5 mA; f = 100 MHz; note 1
IF = 1 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
MIN.
−
50
−
−
−
−
−
−
−
TYP.
0.95
−
−
0.4
0.3
0.2
5.5
3.6
1.5
MAX. UNIT
1.1 V
−
V
100 nA
−
pF
0.55 pF
0.35 pF
9
Ω
6.5 Ω
2.5 Ω
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
GRAPHICAL DATA
VALUE
85
UNIT
K/W
10
handbook, halfpage
rD
(Ω)
5
MGS322
2
1
10−1
1
10
IF (mA)
f = 100 MHz; Tj = 25 °C.
Fig.2 Forward resistance as a function of the
forward current; typical values.
1999 May 10
500
handbook, halfpage
Cd
(fF)
400
300
200
100
0
0
4
MGS323
8
12
16
20
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
3
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