BD743B Просмотр технического описания (PDF) - Power Innovations

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BD743B

NPN SILICON POWER TRANSISTORS

Power Innovations 

BD743, BD743A, BD743B, BD743C

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

100

TCS637AA

TC = 125°C

TC = 25°C

TC = -55°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

10

IC

IB

= 10

TCS637AB

tp = 300µs, duty cycle < 2%

1·0

VCE = 4 V

tp = 300 µs, duty cycle < 2%

10

0·1

1·0

10

IC - Collector Current - A

Figure 1.

0·1

0·01

100

0·1

TC = -55°C

TC = 25°C

TC = 125°C

1·0

10

100

IC - Collector Current - A

Figure 2.

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

10

TCS637AC

VCE = 4 V

tp = 300µs, duty cycle < 2%

1·0

0·1

0·1

TC = -55°C

TC = 25°C

TC = 125°C

1·0

10

100

IC - Collector Current - A

Figure 3.

PRODUCT INFORMATION

3

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