IRHQ6110 Просмотр технического описания (PDF) - International Rectifier

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IRHQ6110

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)

International Rectifier 

IRHQ6110

100

10

VGS

TOP -15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

BOTTOM -5.0V

1

-5.0V

P-Channel

Q2,Q3

100

10

VGS

TOP -15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

BOTTOM -5.0V

1

Pre-Irradiation

-5.0V

0.1

0.01

0.1

20µs PULSE WIDTH

TJ= 25 °C

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 14. Typical Output Characteristics

0.1

0.01

0.1

20µs PULSE WIDTH

TJ= 150 °C

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 15. Typical Output Characteristics

100

TJ = 25°C

10

TJ = 150° C

1

0.1

5

VDS = -50V

20µs PULSE WIDTH

7

9

11

13

15

-VGS , Gate-to-Source Voltage (V)

Fig 16. Typical Transfer Characteristics

10

2.5 ID = -2.3A

2.0

1.5

1.0

0.5

VGS= -12V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 17. Normalized On-Resistance

Vs. Temperature

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