IRG4BC40SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600
V VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage 18
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.75
1.32 1.5
V
V/°C
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 31A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
1.68
V
IC = 60A
See Fig.2, 5
1.32
IC = 31A , TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage -9.3 mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
12 21 S VCE = 100V, IC = 31A
ICES
Zero Gate Voltage Collector Current
250 µA VGE = 0V, VCE = 600V
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100 150
IC = 31A
14 21
34 51
nC VCC = 400V
VGE = 15V
See Fig. 8
22
18 ns TJ = 25°C
650 980
IC = 31A, VCC = 480V
380 570
VGE = 15V, RG = 10Ω
0.45
Energy losses include "tail"
6.5 mJ See Fig. 10, 11, 13, 14
6.95 9.9
23
TJ = 150°C,
21
1000
ns IC = 31A, VCC = 480V
VGE = 15V, RG = 10Ω
940
Energy losses include "tail"
12 mJ See Fig. 13, 14
7.5 nH Measured 5mm from package
2200
VGE = 0V
140
26
pF VCC = 30V
= 1.0MHz
See Fig. 7
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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