IRFM260 Просмотр технического описания (PDF) - International Rectifier

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IRFM260

200V, N-CHANNEL POWER MOSFET THRU-HOLE (TO-254AA)

International Rectifier 

IRFM260

12000

10000

8000

6000

V GS = 0V,

f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

4000

2000

Crss

0

A

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20 ID = 35A

16

12

V DS = 160V

V DS = 100V

V DS = 40V

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

A

0

50

100

150

200

250

Q G , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

TJ = 150°C

TJ = 25°C

10

1

VGS = 0V A

0.0

1.0

2.0

3.0

4.0

VSD , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1000

100

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µs

10

Tc = 25°C

Tj = 150°C

Single Pulse

1

1

10

1ms

10ms

100

1000

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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