IRFD210 Просмотр технического описания (PDF) - Vishay Semiconductors

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IRFD210

Power MOSFET

Vishay Semiconductors 

TA, Ambient Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Ambient Temperature

IRFD210, SiHFD210

Vishay Siliconix

VDS

VGS

Rg

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Document Number: 91129

S10-2462-Rev. C, 08-Nov-10

www.vishay.com

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