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IRF7413ZTRPBF

HEXFET® Power MOSFET

International Rectifier 

IRF7413ZPbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

IDSS

IGSS

gfs

Qg

Qgs1

Qgs2

Qgd

Qgodr

Qsw

Qoss

RG

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Output Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

30

–––

–––

–––

1.35

–––

–––

–––

–––

–––

62

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

0.025

8.0

10.5

1.80

-5.0

–––

–––

–––

–––

–––

9.5

3.0

1.0

3.0

2.5

4.0

5.6

2.3

8.7

6.3

11

3.8

1210

270

140

–––

–––

10

13

2.25

–––

1.0

150

100

-100

–––

14

–––

–––

–––

–––

–––

–––

4.5

–––

–––

–––

–––

–––

–––

–––

V VGS = 0V, ID = 250µA

V/°C

mΩ

Reference to 25°C, ID = 1mA

e VGS = 10V, ID = 13A

e VGS = 4.5V, ID = 10A

V VDS = VGS, ID = 250µA

mV/°C

µA VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

nA VGS = 20V

VGS = -20V

S VDS = 15V, ID = 10A

VDS = 15V

nC VGS = 4.5V

ID = 10A

See Fig. 16

nC VDS = 15V, VGS = 0V

Ω

VDD = 16V, VGS = 4.5V

ID = 10A

ns Clamped Inductive Load

VGS = 0V

pF VDS = 15V

ƒ = 1.0MHz

Avalanche Characteristics

Parameter

EAS

d Single Pulse Avalanche Energy

IAR

™ Avalanche Current

Typ.

–––

–––

Max.

32

10

Units

mJ

A

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

––– ––– 3.1

MOSFET symbol

(Body Diode)

A showing the

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

––– ––– 100

––– ––– 1.0

––– 24 36

––– 16 24

integral reverse

p-n junction diode.

e V TJ = 25°C, IS = 10A, VGS = 0V

ns TJ = 25°C, IF = 10A, VDD = 15V

e nC di/dt = 100A/µs

ton

Forward Turn-On Time

2

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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