IN74HCT573A Просмотр технического описания (PDF) - IK Semicon Co., Ltd

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IN74HCT573A

Octal 3-State Noninverting Transparent Latch High-Performance Silicon-Gate CMOS

IK Semicon Co., Ltd 

IN74HCT573A

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Symbol

Parameter

Test Conditions

VIH Minimum High-

VOUT=0.1 V or VCC-0.1 V

Level Input Voltage ⎢IOUT⎢≤ 20 µA

VIL Maximum Low -

VOUT=0.1 V or VCC-0.1 V

Level Input Voltage ⎢IOUT⎢ ≤ 20 µA

VOH Minimum High-

VIN=VIH or VIL

Level Output Voltage ⎢IOUT⎢ ≤ 20 µA

VIN=VIH or VIL

⎢IOUT⎢ ≤ 6.0 mA

VOL Maximum Low-

VIN= VIL or VIH

Level Output Voltage ⎢IOUT⎢ ≤ 20 µA

VIN= VIL or VIH

⎢IOUT⎢ ≤ 6.0 mA

IIN

Maximum Input

Leakage Current

VIN=VCC or GND

IOZ

Maximum Three

State Leakage

Current

Output in High-Impedance

State

VIN =VIH or VIL

VOUT=VCC or GND

ICC

Maximum Quiescent VIN=VCC or GND

Supply Current

IOUT=0µA

(per Package)

∆ICC Additional Quiescent VIN=2.4 V, Any One Input

Supply Current

VIN=VCC or GND,

Other Inputs

IOUT=0µA

VCC Guaranteed Limit

V 25 °C ≤85 ≤125 Unit

to °C °C

-55°C

4.5 2.0 2.0 2.0 V

5.5 2.0 2.0 2.0

4.5 0.8 0.8 0.8 V

5.5 0.8 0.8 0.8

4.5 4.4 4.4 4.4 V

5.5 5.4 5.4 5.4

4.5 3.98 3.84 3.7

4.5 0.1 0.1 0.1 V

5.5 0.1 0.1 0.1

4.5 0.26 0.33 0.4

5.5 ±0.1 ±1.0 ±1.0 µA

5.5 ±0.5 ±5.0 ±10 µA

5.5 4.0 40 160 µA

≥-55°C

25°C to mA

125°C

5.5

2.9

2.4

Rev. 00

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