IL208AT Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
IL208AT
Vishay Semiconductors
IL208AT Datasheet PDF : 7 Pages
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IL205AT/ 206AT/ 207AT/ 208AT
Vishay Semiconductors
Output
Parameter
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector-base breakdown voltage
ICMAX DC
ICMAX
Power dissipation
Derate linearly from 25 °C
Test condition
t < 1.0 ms
Symbol
BVCEO
BVECO
BVCBO
ICMAX DC
ICMAX
Pdiss
Coupler
Parameter
Total package dissipation (LED + detector)
Test condition
Derate linearly from 25 °C
Operating temperature
Storage temperature
Soldering time
at 260 °C
Symbol
Ptot
Tamb
Tstg
Value
70
7.0
70
50
100
150
2.0
Value
240
3.3
- 55 to + 100
- 55 to + 150
10
Unit
V
V
V
mA
mA
mW
mW/°C
Unit
mW
mW/°C
°C
°C
s
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Test condition
IF = 10 mA
VR = 6.0 V
VR = 0 V
Symbol
Min
Typ.
Max
Unit
VF
1.3
1.5
V
IR
0.1
100
µA
CO
13
pF
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector-emitter leakage
current
Test condition
IC = 100 µA
IE = 100 µA
VCE = 10 V
Symbol
Min
Typ.
Max
Unit
BVCEO
70
V
BVECO
7.0
10
V
ICEO
5.0
50
nA
Coupler
Parameter
Saturation voltage, collector-
emitter
Isolation test voltage
Test condition
IC = 2.0 mA, IF = 10 mA
Equivalent DC, isolation voltage
Capacitance (input-output)
Resistance, input to output
Symbol
Min
Typ.
Max
Unit
VCEsat
0.4
V
VISO
3000
3535
CIO
0.5
RIO
100
VRMS
VDC
pF
Ω
www.vishay.com
2
Document Number 83614
Rev. 1.6, 18-Apr-05
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