HSM107S Просмотр технического описания (PDF) - Renesas Electronics
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HSM107S Datasheet PDF : 6 Pages
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HSM107S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Peak forward current
Non-Repetitive peak forward surge current
Average forward current
Junction temperature
Storage temperature
Notes: 1. Rectangular wave, 10 ms
2. Per one device
Symbol
VR
IFM
IFSM *1
IO *2
Tj
Tstg
Value
Unit
8
V
0.1
A
0.5
A
50
mA
125
°C
−55 to +125
°C
Electrical Characteristics *1
(Ta = 25°C)
Item
Reverse voltage
Reverse current
Forward voltage
ESD Capability *2
Symbol Min Typ Max
VR
8
—
—
IR
30
VF
0.3
100
Notes: 1. Per one device
2. Failure Criterion ; IR ≥ 60 µA at VR = 5 V
Unit
V
µA
V
V
Test Condition
IR = 1.0 mA
VR = 5 V
IF = 10 mA
C = 200 pF, Both forward
and reverse direction 1 pulse
Rev.7.00, Jan.28.2004, page 2 of 5
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