APT1004 Просмотр технического описания (PDF) - Advanced Power Technology
Номер в каталоге
Компоненты Описание
Список матч
APT1004 Datasheet PDF : 4 Pages
| |||
DYNAMIC CHARACTERISTICS
Symbol Characteristic
CDC
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
f = 1 MHz
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8Ω
APT1004RCN
MIN TYP MAX UNIT
15
22
805 950
pF
115 160
37
60
35
55
4.3
7
nC
18
27
10
20
12
24
ns
33
50
16
32
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current 1 (Body Diode)
VSD
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
t rr
Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)
MIN TYP MAX UNIT
3.6
14.4
Amps
1.3 Volts
290 580 ns
1.65 3.3 µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX
RθJC
RθJA
Junction to Case
Junction to Ambient
1.00
50
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
UNIT
W/°C
1.0
D=0.5
0.5
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.01
SINGLE PULSE
Note:
t1
0.005
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Share Link: 