FS12VS-5 Просмотр технического описания (PDF) - Renesas Electronics
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FS12VS-5 Datasheet PDF : 7 Pages
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ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
20
TC = 25°C
Pulse Test
16
12
8
ID = 18A
12A
4
6A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
TC = 25°C
VDS = 50V
Pulse Test
32
24
16
8
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
104
7
5
3
2
103
Ciss
7
5
3
2
102
Coss
7
5
3 Tch = 25°C
2 f = 1MHz
Crss
VGS = 0V
101
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS12VS-5
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
TC = 25°C
Pulse Test
0.8
VGS = 10V
0.6
20V
0.4
0.2
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
101
7
5
3
125°C
2
75°C
TC = 25°C
100
7
5
3
2
10–1
100
23
5 7 101
VDS = 10V
Pulse Test
2 3 5 7 102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
Tch = 25°C
VDD = 150V
5
VGS = 10V
RGEN = RGS = 50Ω
3
2
102
7
5
3
2
101
100
23
td(off)
tf
tr
td(on)
5 7 101
23
5 7 102
DRAIN CURRENT ID (A)
Sep. 2001
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