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FM25C160B(2014) Просмотр технического описания (PDF) - Cypress Semiconductor

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Компоненты Описание
Список матч
FM25C160B
(Rev.:2014)
Cypress
Cypress Semiconductor Cypress
FM25C160B Datasheet PDF : 20 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
FM25C160B
Data Retention and Endurance
Parameter
Description
TDR
Data retention
NVC
Endurance
Test condition
TA = 125 C
TA = 105 C
TA = 85 C
Over operating temperature
Min
11000
11
121
1013
Max
Unit
Hours
Years
Cycles
Example of an F-RAM Life Time in an AEC-Q100 Automotive Application
An application does not operate under a steady temperature for the entire usage life time of the application. Instead, it is often expected
to operate in multiple temperature environments throughout the application’s usage life time. Accordingly, the retention specification
for F-RAM in applications often needs to be calculated cumulatively. An example calculation for a multi-temperature thermal profiles
is given below.
Tempeature
T
Time Factor
t
Acceleration Factor with respect to Tmax
A [5]
Profile Factor
P
A
=
L-------TL----m--T---a----x----
=
E-----a--
k
-1--
T
T-----m--1---a----x-
e
P = ---------------------------1----------------------------
--t--1---
A1
+
--t--2---
A2
+
--t--3---
A3
+
A--t--4-4--
Profile Life Time
L (P)
LP= P LTmax
T1 = 125 C
T2 = 105 C
T3 = 85 C
T4 = 55 C
t1 = 0.1
t2 = 0.15
t3 = 0.25
t4 = 0.50
A1 = 1
A2 = 8.67
A3 = 95.68
A4 = 6074.80
8.33
> 10.46 Years
Capacitance
Parameter [6]
Description
CO
Output pin capacitance (SO)
CI
Input pin capacitance
Test Conditions
TA = 25 C, f = 1 MHz, VDD = VDD(typ)
Max
Unit
8
pF
6
pF
Thermal Resistance
Parameter
JA
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per EIA /
JESD51.
8-pin SOIC
147
47
Unit
C/W
C/W
AC Test Conditions
Input pulse levels .................................10% and 90% of VDD
Input rise and fall times ...................................................5 ns
Input and output timing reference levels ................0.5 × VDD
Output load capacitance .............................................. 30 pF
Notes
5. Where k is the Boltzmann constant 8.617 × 10-5 eV/K, Tmax is the highest temperature specified for the product, and T is any temperature within the F-RAM product
specification. All temperatures are in Kelvin in the equation.
6. This parameter is characterized but not 100% tested.
Document Number: 001-86150 Rev. *A
Page 12 of 20

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