FL10KM-12A Просмотр технического описания (PDF) - Renesas Electronics

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FL10KM-12A

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

Renesas Electronics 

FL10KM-12A

MITSUBISHI Nch POWER MOSFET

FL10KM-12A

HIGH-SPEED SWITCHING USE

OUTLINE DRAWING

10 ± 0.3

Dimensions in mm

2.8 ± 0.2

φ 3.2 ± 0.2

G 10V DRIVE

G VDSS ............................................................................... 600V

G rDS (ON) (MAX) ................................................................ 1.1Ω

G ID ......................................................................................... 10A

APPLICATION

SMPS, Inverter fluorescent light sets, etc.

2.54 ± 0.25

1.1 ± 0.2

1.1 ± 0.2

0.75 ± 0.15

2.54 ± 0.25

0.75 ± 0.15

➀➁➂

➁

➀ GATE

➀

➁ DRAIN

➂ SOURCE

➂

TO-220FN

MAXIMUM RATINGS (Tc = 25°C)

Symbol

VDSS

VGSS

ID

IDM

IDA

PD

Tch

Tstg

Viso

—

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Drain current (Pulsed)

Avalanche drain current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Isolation voltage

Weight

VGS = 0V

VDS = 0V

L = 200µH

Conditions

AC for 1minute, Terminal to case

Typical value

Ratings

600

±30

10

30

10

40

–55 ~ +150

–55 ~ +150

2000

2.0

Unit

V

V

A

A

A

W

°C

°C

V

g

Sep. 2001

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