EGP20AHE3 Просмотр технического описания (PDF) - Vishay Semiconductors
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EGP20AHE3 Datasheet PDF : 5 Pages
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EGP20A, EGP20B, EGP20C, EGP20D, EGP20F, EGP20G
www.vishay.com
Vishay General Semiconductor
100
EGP20A thru EGP20D
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
EGP20F and EGP20G
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Peak Reverse Voltage (%)
Fig. 6 - Typical Reverse Leakage Characteristics
100
EGP20A thru EGP20D
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
140
TJ = 25 °C
120
f = 1.0 MHz
Vsig = 50 mVp-p
100
80
60
40
20
0
0.1
EGP20A thru EGP20D
EGP20F and EGP20G
1
10
100
Reverse Voltage (V)
1000
Fig. 7 - Typical Junction Capacitance
100
EGP20F and EGP20G
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 8 - Typical Transient Thermal Impedance
Revision: 15-Aug-13
3
Document Number: 88583
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