DCR806SG28 Просмотр технического описания (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

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DCR806SG28

Phase Control Thyristor

Shenzhen Luguang Electronic Technology Co., Ltd 

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

Gate trigger voltage

VGD

Gate non-trigger voltage

IGT

Gate trigger current

IGD

Gate non-trigger current

Test Conditions

VDRM = 5V, Tcase = 25°C

At VDRM, Tcase = 125°C

VDRM = 5V, Tcase = 25°C

VDRM = 5V, Tcase = 25°C

DCR960G26

Max. Units

1.5

V

TBD

V

250 mA

TBD mA

CURVES

3000

2000

25°C min

25°C max

125°C min

125°C max

1000

0

0.5

1.0

1.5

2.0

2.5

Instantaneous on-state voltage VT - (V)

Fig.2 Maximum & minimum on-state characteristics

VTM EQUATION

VTM = A + Bln (IT) + C.IT+D. IT

Where

A = 0.404415

B = 0.080354

C = 0.000415

D = 0.003401

these values are valid for Tj = 125°C for IT 50A to 3000A

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