CY62147DV18L-55BVXI Просмотр технического описания (PDF) - Cypress Semiconductor
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CY62147DV18L-55BVXI Datasheet PDF : 11 Pages
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CY62147DV18
MoBL2™
Electrical Characteristics Over the Operating Range (continued)
Parameter Description
ISB1
Automatic CE
Power-Down
Current —
CMOS Inputs
ISB2
Automatic CE
Power-down
Current —
CMOS Inputs
Test Conditions
CE > VCC−0.2V, VCC(max)=1.95V
VIN>VCC–0.2V,
VIN<0.2V); f = fMAX
(Address and Data
VCC(max)=2.25V
Only), f = 0 (OE,
WE, BHE and BLE)
CE > VCC – 0.2V, VCC(max)=1.95V
VIN > VCC – 0.2V or
VIN < 0.2V, f = 0 VCC(max)=2.25V
CY62147DV18-55
Min. Typ.[7] Max.
L
0.5
12
LL
8
L
0.5
18
LL
12
L
0.5
12
LL
8
L
0.5
18
LL
12
CY62147DV18-70
Min. Typ.[7] Max.
0.5
12
8
0.5
18
12
0.5
12
8
0.5
18
12
Unit
µA
µA
Capacitance for all Packages[8]
CIN
COUT
Parameter
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
Max.
Unit
10
pF
10
pF
Thermal Resistance
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)[8]
ΘJC
Thermal Resistance
(Junction to Case)[8]
Test Conditions
Still Air, soldered on a 3 × 4.5 inch, four-layer printed circuit
board
BGA
75
10
Unit
°C/W
°C/W
AC Test Loads and Waveforms
R1
VCC
OUTPUT
30 pF
ALL INPUT PULSES
VCC
GND
10%
90%
90%
10%
R2 Rise Time = 1 V/ns
Fall Time = 1 V/ns
INCLUDING
JIG AND
SCOPE
Equivalent to:
THÉVENIN EQUIVALENT
OUTPUT
RTH
V
Parameters
R1
R2
RTH
VTH
1.80V
13500
10800
6000
0.80
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
VDR
VCC for Data Retention
ICCDR
Data Retention Current
VCC= 1.0V CE > VCC – 0.2V,
L
VIN > VCC – 0.2V or VIN < 0.2V LL
tCDR[8]
Chip Deselect to Data Retention Time
tR
Operation Recovery Time
Notes:
8. Tested initially and after any design or process changes that may affect these parameters.
Unit
Ω
Ω
Ω
V
Min.
1.0
Typ.[7]
0
tRC
Max. Unit
V
6
µA
4
ns
ns
Document #: 38-05343 Rev. *B
Page 4 of 11
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