CY62147CV25-70 Просмотр технического описания (PDF) - Cypress Semiconductor

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CY62147CV25-70

256K x 16 Static RAM

Cypress Semiconductor 

CY62147CV25/30/33

MoBL™

Electrical Characteristics Over the Operating Range (continued)

Parameter

Description

Test Conditions

CY62147CV33-55

CY62147CV33-70

Min. Typ.[4] Max. Min. Typ.[4] Max. Unit

VOH

Output HIGH Voltage IOH = –1.0 mA VCC = 3.0V

2.4

VOL

Output LOW Voltage IOL = 2.1 mA

VCC = 3.0V

VIH

Input HIGH Voltage

2.2

2.4

0.4

VCC + 2.2

0.3V

V

0.4 V

VCC + V

0.3V

VIL

Input LOW Voltage

–0.3

IIX

Input Leakage Current GND < VI < VCC

–1

IOZ

Output Leakage Cur- GND < VO < VCC, Output Disabled –1

rent

0.8 –0.3

+1 –1

+1 –1

0.8 V

+1 µA

+1 µA

VCC Operating Supply f = fMAX = 1/tRC VCC = 3.6V

ICC

Current

f = 1 MHz

IOUT = 0 mA

CMOS Levels

7

15

1.5

3

5.5 12 mA

1.5

3

Automatic CE

CE > VCC – 0.2V

ISB1

Power-Down Cur-

VIN > VCC – 0.2V or VIN < 0.2V,

rent— CMOS Inputs f = fmax (Address and Data Only),

f=0 (OE,WE,BHE and BLE)

8

20

8

20 µA

Automatic CE

ISB2

Power-Down Cur-

rent— CMOS Inputs

.

Capacitance[5]

CE > VCC – 0.2V

VIN > VCC – 0.2V or VIN < 0.2V,

f = 0, VCC = 3.6V

Parameter

CIN

COUT

Description

Input Capacitance

Output Capacitance

Test Conditions

TA = 25°C, f = 1 MHz,

VCC = VCC(typ.)

Max.

Unit

6

pF

8

pF

Thermal Resistance

Description

Test Conditions

Thermal Resistance

(Junction to Ambient)[5]

Still Air, soldered on a 3 x 4.5 inch, two-layer printed

circuit board

Thermal Resistance

(Junction to Case)[5]

Note:

5. Tested initially and after any design or process changes that may affect these parameters.

Symbol

ΘJA

ΘJC

BGA

55

16

Unit

°C/W

°C/W

Document #: 38-05202 Rev. *A

Page 4 of 14

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