CS5126 Просмотр технического описания (PDF) - ON Semiconductor
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CS5126 Datasheet PDF : 12 Pages
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CS5124, CS5126
ELECTRICAL CHARACTERISTICS (continued) (–40°C ≤ TJ ≤ 125°C; –40°C ≤ TA ≤ 105°C, 7.60 V ≤ VCC ≤ 20 V, UVLO = 3.0 V,
ISENSE = 0 V, CV(CC) = 0.33 µF, CGATE = 1.0 nF (ESR = 10 Ω); CSS = 470 pF; CV(FB) = 100 pF, unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
Unit
Soft Start
Soft Start Charge Current
–
7.0
10
13
µA
Soft Start Discharge Current
–
0.5
10.0
–
mA
VSS Voltage when VFB Begins to Rise VFB = 300 mV
Peak Soft Start Charge Voltage
–
1.40
1.62
1.80
V
4.7
4.9
–
V
Valley Soft Start Discharge Voltage
–
200
275
400
mV
Current Sense
CS5124 Only
First Current Sense Threshold
At max duty cycle
170
195
215
mV
Second Current Sense Threshold
–
250
275
315
mV
ISENSE to GATE Prop. Delay
0 to 700 mV pulse into ISENSE (after blanking
60
time)
90
130
ns
Leading Edge Blanking Time
Internal Offset
0 to 400 mV pulse into ISENSE
Note 3
90
130
180
ns
–
60
–
mV
Current Sense
CS5126 Only
First Current Sense Threshold
At max duty cycle
300
335
360
mV
Second Current Sense Threshold
–
485
525
575
mV
ISENSE to GATE Prop. Delay
0 to 800 mV pulse into ISENSE (after blanking
60
time)
90
130
ns
Leading Edge Blanking Time
Internal Offset
0 to 550 mV pulse into ISENSE
Note 3
110
175
210
ns
–
125
–
mV
Voltage Feedback
VFB Pull–up Res.
VFB Clamp Voltage
VFB Clamp Voltage
VFB Fault Voltage Threshold
Output Gate Drive
–
CS5124 Only
CS5126 Only
–
2.9
4.3
8.1
kΩ
2.63
2.90
3.15
V
2.40
2.65
290
V
460
490
520
mV
Maximum Sleep Pull–down Voltage
GATE High (AC)
GATE Low (AC)
VCC = 6.0 V, IOUT = 1.0 mA
Series resistance < 1.0 Ω, Note 3
Series resistance < 1.0 Ω, Note 3
–
1.2
2.0
V
VCC – 1.0 VCC – 0.5
–
V
–
0.0
0.5
V
GATE High Clamp Voltage
Rise Time
Fall TIme
Thermal Shutdown
VCC = 20 V
11.0
13.5
16.0
V
Measure GATE rise time, 1.0 V < GATE < 9.0 V
–
VCC = 12 V
45
65
ns
Measure GATE fall time, 9.0 V > GATE > 1.0 V
–
VCC = 12 V
25
55
ns
Thermal Shutdown Temperature
Note 3 GATE low
135
150
165
°C
Thermal Enable Temperature
Note 3 GATE switching
100
125
150
°C
Thermal Hysteresis
Note 3
15
25
35
°C
3. Not tested in production. Specification is guaranteed by design.
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