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CS4124YN16

High Side PWM FET Controller

ON Semiconductor 

CS4124

ELECTRICAL CHARACTERISTICS (continued) (4.0 V ≤ VCC ≤ 26 V; –40°C < TJ < 125°C; unless otherwise specified.)

Characteristic

Test Conditions

Min

Typ

Max

External Drive (OUTPUT) (continued)

Output Sink Current

Output Source Current

Output High Voltage

Output Low Voltage

Charge Pump (DRV)

4.0 V ≤ VCC < 7.0 V:

RGATE = 6.0 Ω, CGATE = 5.0 nF

7.0 V ≤ VCC ≤ 26 V:

RGATE = 6.0 Ω, CGATE = 5.0 nF

4.0 V ≤ VCC < 7.0 V:

RGATE = 6.0 Ω, CGATE = 5.0 nF

7.0 V ≤ VCC ≤ 26 V:

RGATE = 6.0 Ω, CGATE = 5.0 nF

IOUT = 1.0 mA

IOUT = –1.0 mA

–

150

–

–

300

–

–

150

–

–

300

–

VBOOST = 1.7

–

–

–

–

1.3

Boost Voltage

–

VCC + 6.4

–

–

Unit

mA

mA

mA

mA

V

V

V

PIN FUNCTION DESCRIPTION

PACKAGE PIN #

16 Lead PDIP

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

PIN SYMBOL

OUTPUT

BOOST

FLT

ROSC

COSC

CTL

PGND

VCC

VREG

SNI

PMP

ISENSE–

ISENSE+

IADj

INH

GND

FUNCTION

MOSFET gate drive.

Boost voltage.

Fault time out capacitor.

Oscillator resistor.

Oscillator capacitor.

Pulse width control input.

Power ground for on chip clamp.

Positive power supply input.

5.0 V linear regulator.

Sense inductor current.

Collector of boost power transistor.

Current sense minus.

Current sense plus.

Current limit adjust.

Output Inhibit.

Ground.

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