BU407 Просмотр технического описания (PDF) - SavantIC Semiconductor

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BU407

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BU406 BU407

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

BU406

BU407

IC=100mA ; IB=0

VCEsat

VBEsat

ICES

IEBO

hFE

fT

COB

tf

Collector-emitter saturation voltage IC=5A ;IB=0.5A

Base-emitter saturation voltage

IC=5A ;IB=0.5A

Collector cut-off current

BU406

BU407

VCE=400V; VBE=0

VCE=330V; VBE=0

Emitter cut-off current

VEB=6.0V; IC=0

DC current gain

IC=2A ; VCE=5V

Transition frequency

IC=0.5A ;VCE=10V;f=1.0MHz

Output capacitance

Fall time

IE=0 ;VCB=10V;f=1.0MHz

IC=5A ;VCC=40V

IB1 =-IB2=0.6A;L=150µH

MIN TYP. MAX UNIT

200

V

150

1.0

V

1.2

V

5

mA

1.0

mA

40

120

10

MHz

80

pF

0.75

µs

2

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