BTA12-800B Просмотр технического описания (PDF) - Comset Semiconductors
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BTA12-800B Datasheet PDF : 3 Pages
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SEMICONDUCTORS
BTA12 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VDRM
VRRM
IGT
VGT
IH
VT
Repetitive peak
off-state voltage
Repetitive peak
reverse voltage
BTA12-600B 600 -
ID = 0.1 mA BTA12-800B 800
-
BTA12-600B 600 -
ID = 0.5 mA
BTA12-800B 800 -
-
-
V
-
-
Gate trigger current
Gate trigger voltage
Holding current
On-state voltage
VD = 12 V
RL = 100 Ω
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
VD = 12 V
RL = 100 Ω
T2+
http://www.DataSheet4U.net/
G-
T2- G-
T2- G+
IT = 100 mA, IGT = 20 mA
IT = 17 A
-
-
25
-
-
50 mA
-
-
50
-
- 100
-
-
1.5
-
-
1.5
V
-
-
1.5
-
-
1.8
-
-
15 mA
-
- 1.55 V
29/09/2012
COMSET SEMICONDUCTORS
2|3
datasheet pdf - http://www.DataSheet4U.net/
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